Технические параметры
- Technology: SiC
- Drain current: 54A
- Module type: MOSFET transistor
- Electrical mounting: screw
- Mechanical mounting: screw
- Drain-source voltage: 1.2kV
- Pulsed drain current: 275A
- Semiconductor structure: single transistor
- Case: SOT227B
- On-State Resistance: 31mΩ
- Power dissipation: 278W