Транзистор: N-MOSFET; полевой; 240В; 100мА; 360мВт; SOT23; SIPMOS™ Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Case: SOT23
- Continuous Drain Current (Id): 11mA
- Drain current: 100mA
- Drain-source voltage: 240V
- Drain-Source Voltage (Vds): 240V
- Fall Time: 64.5ns
- Gate-source voltage: ±20В
- Gate-Source Voltage: 20V
- Height Units: 3
- Housing: SOT23
- Manufacturer: Infineon
- Mount: SMD
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 14Ω
- On-State Resistance: 14Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 360mW
- Reflow Temperature Max.: 260°C
- Rise Time: 3.1ns
- Technology: SIPMOS™
- Transistor Polarity: N-Channel
- Transistor type: N-MOSFET
- Turn-OFF Delay Time: 13.7ns
- Turn-ON Delay Time: 3.3ns
- Мощность: 0.36W
- Сопротивление в открытом состоянии: 14Ω
- Ток стока: 0.1A
