Технические параметры
- Power: 0.14W
- Drain current: 0.19A
- Gate charge: 0.4nC
- Polarisation: unipolar
- Kind of package: reel
- Transistor type: N-MOSFET
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT23
- On-State Resistance: 2Ω