Технические параметры
- Power: 30W
- Drain current: 48A
- Gate charge: 22nC
- Polarisation: unipolar
- Transistor type: N-MOSFET
- Gate-source voltage: ±20V
- Drain-source voltage: 40V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: UltraSO-8
- On-State Resistance: 10mΩ