Транзистор: IGBT; 900В; 35А; 290Вт; TO247-3 Технические параметры
- Manufacturer: MICROSEMI
- Power: 290W
- Technology: POWER MOS 8®
- Collector current: 35A
- Collector-emitter voltage: 900V
- Gate charge: 84nC
- Turn-on time: 25ns
- Turn-off time: 298ns
- Kind of package: tube
- Transistor type: IGBT
- Gate - emitter voltage: ±30V
- Pulsed collector current: 105A
- Mounting: THT
- Case: TO247-3