Транзистор: N-MOSFET; полевой; 600В; 2,5А; 70Вт; D2PAK Технические параметры
- Manufacturer: STM
- Technology: SuperMesh™
- Drain current: 2.5A
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 2000mΩ
- Power dissipation: 70W