Технические параметры
- Technology: TRENCH POWER MV
- Drain current: 0.272A
- Gate charge: 2.4nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: 1.5A
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT23
- Type of transistor: N-MOSFET
- On-State Resistance: 3Ω
- Power dissipation: 0.35W