Технические параметры
- Technology: CoolGaN™
- Drain current: 31A
- Gate charge: 5.8nC
- Channel kind: enhanced
- Gate current: 20mA
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: -10V
- Drain-source voltage: 600V
- Pulsed drain current: 60A
- Mounting: SMD
- Case: PG-HSOF-8-3
- Type of transistor: N-JFET
- On-State Resistance: 70Ω
- Power dissipation: 125W