Технические параметры
- Drain current: 2.25A
- #Promotion: vishay_201906
- Gate charge: 4.1nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±12V
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: PowerPAK® SC70
- Type of transistor: N-MOSFET
- On-State Resistance: 0.056Ω
- Power dissipation: 13.6W