Технические параметры
- Technology: X3-Class
- Drain current: 240A
- Reverse recovery time: 165ns
- Gate charge: 345nC
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Drain-source voltage: 250V
- Pulsed drain current: 600A
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 4.5mΩ
- Power dissipation: 695W