Модуль; одиночный транзистор; 100В; 295А; SOT227B; Ugs: ±30В; 279нC Технические параметры
- Case: SOT227B
- Channel kind: enhanced
- Drain current: 295A
- Drain-source voltage: 100V
- Electrical mounting: screw
- Gate charge: 279нКл
- Gate-source voltage: ±30V
- Kind of package: bulk
- Manufacturer: IXYS
- Module type: transistor
- Mounting: screw
- On-State Resistance: 5.5mΩ
- Polarisation: unipolar
- Power dissipation: 1070W
- Pulsed drain current: 900A
- Reverse recovery time: 200ns
- Semiconductor structure: single transistor
- Technology: Polar™