Технические параметры
- Technology: Q3-Class
- Drain current: 49A
- Reverse recovery time: 300ns
- Gate charge: 270nC
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Electrical mounting: screw
- Gate-source voltage: ±40V
- Drain-source voltage: 800V
- Pulsed drain current: 180A
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 140mΩ
- Power dissipation: 960W