Технические параметры
- Technology: X-Class
- Drain current: 90A
- Reverse recovery time: 250ns
- Gate charge: 340nC
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Electrical mounting: screw
- Gate-source voltage: ±40V
- Drain-source voltage: 850V
- Pulsed drain current: 180A
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 41mΩ
- Power dissipation: 1200W