Технические параметры
- Technology: Linear L2™
- Drain current: 100A
- Reverse recovery time: 420ns
- Gate charge: 500nC
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Drain-source voltage: 200V
- Pulsed drain current: 275A
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 24mΩ
- Power dissipation: 735W