Технические параметры
- Technology: TrenchT2™
- Drain current: 600A
- Reverse recovery time: 100ns
- Gate charge: 590nC
- Module type: transistor
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: bulk
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Drain-source voltage: 40V
- Pulsed drain current: 1.8kA
- Semiconductor structure: single transistor
- Mounting: screw
- Case: SOT227B
- On-State Resistance: 1.3mΩ
- Power dissipation: 940W