Технические параметры
- Drain current: 46A
- Gate charge: 20nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 40V
- Mounting: SMD
- Case: UltraSO8
- Type of transistor: N-MOSFET
- On-State Resistance: 5.9mΩ
- Power dissipation: 20.5W