Технические параметры
- Drain current: 3A
- Gate charge: 5.7nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±12V
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DFN1,6x1,6A
- Type of transistor: N-MOSFET
- On-State Resistance: 54mΩ
- Power dissipation: 1.15W