Технические параметры
- Drain current: 3.5A
- Gate charge: 6.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Mounting: SMD
- Case: DFN2x2B
- Type of transistor: N-MOSFET
- On-State Resistance: 72mΩ
- Power dissipation: 1.8W