Транзистор: N-MOSFET; полевой; 30В; 8А; 2Вт; DFN3x3 Технические параметры
- Case: DFN3x3
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Gate charge: 15нКл
- Gate-source voltage: ±20V
- Manufacturer: AOS
- Mounting: SMD
- On-State Resistance: 17mΩ
- Polarisation: unipolar
- Power dissipation: 2W
- Type of transistor: N-MOSFET