Технические параметры
- Drain current: 21A
- Gate charge: 13.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DFN5x6
- Type of transistor: N-MOSFET
- On-State Resistance: 13.2mΩ
- Power dissipation: 10.5W