Технические параметры
- Drain current: 41A
- Gate charge: 44nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±25V
- Drain-source voltage: 80V
- Mounting: SMD
- Case: DFN5x6
- Type of transistor: N-MOSFET
- On-State Resistance: 9.6mΩ
- Power dissipation: 33W