Технические параметры
- Drain current: 7.5A
- Gate charge: 19.4nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Mounting: SMD
- Case: DFN5x6
- Type of transistor: N-MOSFET
- On-State Resistance: 79mΩ
- Power dissipation: 10W