Транзистор: IGBT; GenX3™; 1,2кВ; 27А; 150Вт; PLUS247™ Технические параметры
- Case: PLUS247™
- Collector current: 27A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.1V
- Collector-emitter voltage: 1.2kV
- Collector-Emitter Voltage (Vceo): 1.2kV
- Continuous Collector Current (Ic): 43A
- Emitter Leakage Current: 500nA
- Gate - emitter voltage: ±20V
- Gate charge: 76нКл
- Gate Emitter Voltage (Vge): 20V
- Height Units: 3
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 125°C
- Operating Temperature Min.: -40°C
- Package Type: ISOPLUS247
- Packaging: Tube
- Phases: Single
- Power dissipation: 150W
- Power Dissipation (Pd): 150W
- Pulsed collector current: 75A
- Reflow Temperature Max.: 260°C
- Technology: XPT™
- Turn-off time: 350ns
- Turn-on time: 110ns
- Type of transistor: IGBT
