Транзистор: IGBT; BiMOSFET™; 1,6кВ; 16А; 250Вт; ISOPLUS i4-pac™ Технические параметры
- Case: ISOPLUS i4-pac™
- Collector current: 16A
- Collector-emitter voltage: 1.6kV
- Features of semiconductor devices: high voltage
- Gate - emitter voltage: ±20V
- Gate charge: 130нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- Power dissipation: 250W
- Pulsed collector current: 40A
- Technology: BiMOSFET™
- Turn-off time: 340ns
- Turn-on time: 260ns
- Type of transistor: IGBT