Технические параметры
- Technology: CoolMOS™
- Drain current: 9.4A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 650V
- Pulsed drain current: 45A
- Mounting: THT
- Case: PG-TO220 FP
- Type of transistor: N-MOSFET
- On-State Resistance: 280mΩ
- Power dissipation: 34W