Технические параметры
- Drain current: 4A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±12V
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: MCPH3
- Type of transistor: N-MOSFET
- On-State Resistance: 50mΩ
- Power dissipation: 1W