Технические параметры
- Drain current: 1.8A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 30V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: MCPH6
- Type of transistor: N-MOSFET
- On-State Resistance: 188mΩ
- Power dissipation: 0.8W