Технические параметры
- Drain current: 0.225A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: SOT563-6
- Type of transistor: N-MOSFET
- On-State Resistance: 1.6Ω
- Power dissipation: 0.28W