Технические параметры
- Drain current: 120mA
- Gate charge: 0.43nC
- Channel kind: enhanced
- Polarisation: unipolar
- Drain-source voltage: 60V
- Pulsed drain current: 760mA
- Features of semiconductor devices: logic level
- Mounting: SMD
- Case: TO236AB
- Type of transistor: N-MOSFET
- On-State Resistance: 9.2Ω