Технические параметры
- Drain current: 170mA
- Gate charge: 1nC
- Channel kind: enhanced
- Polarisation: unipolar
- Drain-source voltage: 60V
- Pulsed drain current: 900mA
- Features of semiconductor devices: logic level
- Mounting: SMD
- Case: TO236AB
- Type of transistor: N-MOSFET
- On-State Resistance: 5.7Ω