Технические параметры
- Drain current: 3.75A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 30V
- Pulsed drain current: 24A
- Mounting: SMD
- Case: SOT23-6
- Type of transistor: N-MOSFET
- On-State Resistance: 25mΩ
- Power dissipation: 1.6W