Технические параметры
- Technology: OptiMOS™ 5
- Drain current: 118A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 150V
- Pulsed drain current: 480A
- Mounting: SMD
- Case: PG-TO 263-3
- Type of transistor: N-MOSFET
- On-State Resistance: 4.8mΩ
- Power dissipation: 300W