Технические параметры
- Technology: OptiMOS™ T2
- Drain current: 160A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: -16...20V
- Drain-source voltage: 40V
- Pulsed drain current: 640A
- Mounting: SMD
- Case: PG-TO263-7-3
- Type of transistor: N-MOSFET
- On-State Resistance: 1.5mΩ
- Power dissipation: 167W