Транзистор: N-MOSFET; полевой; 30В; 5,3А; 1,3Вт; SOT23 Технические параметры
- Case: SOT23
- Channel kind: enhanced
- Continuous Drain Current (Id): 5.3A
- Drain current: 5.3A
- Drain-source voltage: 30V
- Drain-Source Voltage (Vds): 30V
- Fall Time: 4.4ns
- Features of semiconductor devices: logic level
- Gate-Source Voltage: 20V
- Height Units: 3
- Manufacturer: Infineon
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 40mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 1.3W
- Power Dissipation (Pd): 1.3W
- Rise Time: 4.4ns
- Technology: HEXFET®
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 7.4ns
- Turn-ON Delay Time: 5.2ns
- Type of transistor: N-MOSFET
