Технические параметры
- Drain current: 35A
- Gate charge: 20nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Pulsed drain current: 120A
- Mounting: SMD
- Case: DFN3.3x3.3
- Type of transistor: N-MOSFET
- On-State Resistance: 20mΩ
- Power dissipation: 54W