Технические параметры
- Technology: EETMOS4
- Drain current: 64A
- Gate charge: 61nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: 192A
- Mounting: SMD
- Case: LF (MO235B similar)
- Type of transistor: N-MOSFET
- On-State Resistance: 5.7mΩ
- Power dissipation: 168W