Технические параметры
- Application: automotive industry
- Drain current: 6A
- Gate charge: 10nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±30V
- Drain-source voltage: 250V
- Pulsed drain current: 24A
- Mounting: SMD
- Case: FE (TO252AB similar)
- Type of transistor: N-MOSFET
- On-State Resistance: 700mΩ
- Power dissipation: 27W