Транзистор: N-MOSFET; EETMOS4; полевой; 40В; 240А; Idm: 720А; 178Вт Технические параметры
- Case: FZ7 (TO263SC)
- Channel kind: enhanced
- Drain current: 240A
- Drain-source voltage: 40V
- Gate charge: 171нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: SHINDENGEN
- Mounting: SMD
- On-State Resistance: 1.29mΩ
- Polarisation: unipolar
- Power dissipation: 178W
- Pulsed drain current: 720A
- Technology: EETMOS4
- Type of transistor: N-MOSFET