Технические параметры
- Technology: Hi-PotMOS2
- Drain current: 6A
- Gate charge: 12.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±30V
- Drain-source voltage: 520V
- Pulsed drain current: 24A
- Mounting: SMD
- Case: FB (TO252AA)
- Type of transistor: N-MOSFET
- On-State Resistance: 1.25Ω
- Power dissipation: 71W