Технические параметры
- Drain current: 8A
- Gate charge: 5.9nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Pulsed drain current: 45A
- Mounting: SMD
- Case: DPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 250mΩ
- Power dissipation: 130W