Транзистор: N-MOSFET; полевой; 600В; 8А; Idm: 45А; 130Вт; DPAK Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 8A
- Drain-source voltage: 600V
- Gate charge: 5.9нКл
- Gate-source voltage: ±30V
- Kind of package: tape
- Manufacturer: Diotec Semiconductor
- Mounting: SMD
- On-State Resistance: 250mΩ
- Polarisation: unipolar
- Power dissipation: 130W
- Pulsed drain current: 45A
- Type of transistor: N-MOSFET