Технические параметры
- Topology: MOSFET half-bridge
- Technology: Z-Rec®
- Drain current: 225A
- Operating temperature: -40...125°C
- Module type: MOSFET transistor
- Polarisation: unipolar
- Electrical mounting: screw
- Gate-source voltage: -5...20V
- Drain-source voltage: 1.7kV
- Pulsed drain current: 900A
- Semiconductor structure: transistor/transistor
- Mounting: screw
- Case: Half-Bridge Module
- On-State Resistance: 8mΩ
- Power dissipation: 1.76kW