Технические параметры
- Drain current: 100mA
- Gate charge: 430pC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 60V
- Pulsed drain current: 0.68A
- Mounting: SMD
- Case: SOT323
- Type of transistor: N-MOSFET
- On-State Resistance: 9.2Ω