Транзистор: N-MOSFET; полевой; 250В; 2,6А; Idm: 17,6А; 45Вт; DPAK Технические параметры
- Case: DPAK
- Channel kind: enhanced
- Drain current: 2.6A
- Drain-source voltage: 250V
- Gate charge: 8.5нКл
- Gate-source voltage: ±30V
- Mounting: SMD
- On-State Resistance: 1Ω
- Polarisation: unipolar
- Power dissipation: 45W
- Pulsed drain current: 17.6A
- Type of transistor: N-MOSFET