Технические параметры
- Application: ignition systems
- Collector current: 12A
- Collector-emitter voltage: 410V
- Kind of package: tape
- Gate - emitter voltage: ±15V
- Pulsed collector current: 30A
- Features of semiconductor devices: logic level
- Mounting: SMD
- Case: DPAK
- Type of transistor: IGBT
- Power dissipation: 94W