Технические параметры
- Technology: SiC
- Drain current: 58A
- Gate charge: 161nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Drain-source voltage: 1.2kV
- Semiconductor structure: double series
- Mounting: SMD
- Case: SMPD-B
- Type of transistor: N-MOSFET
- On-State Resistance: 34mΩ