Транзистор: N-MOSFET; STripFET™ II; полевой; 55В; 80А; Idm: 320А Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 80A
- Drain-source voltage: 55V
- Gate charge: 142нКл
- Gate-source voltage: ±20V
- Kind of package: tape
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 8mΩ
- Polarisation: unipolar
- Power dissipation: 300W
- Pulsed drain current: 320A
- Technology: STripFET™ II
- Type of transistor: N-MOSFET