Транзистор: IGBT; 1,25кВ; 20А; 259Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 20A
- Collector-emitter voltage: 1.25kV
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Gate charge: 69нКл
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Power dissipation: 259W
- Pulsed collector current: 80A
- Type of transistor: IGBT