Транзистор: МОП n-канальный; полевой; 100В; 1,3А; 1,3Вт; DIP4 Семейство Силовые MOП-транзисторы Технические параметры
- Case: DIP4
- Continuous Drain Current (Id): 1.3A
- Drain current: 1.3A
- Drain-source voltage: 100V
- Drain-Source Voltage (Vds): 100V
- Fall Time: 17ns
- Gate-Source Voltage: 20V
- Height Units: 3
- Housing: DIP4
- Manufacturer: Vishay
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 270mΩ
- On-State Resistance: 300MΩ
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -55°C
- Package Type: HVMDIP
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 1.3W
- Rise Time: 27ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 18ns
- Turn-ON Delay Time: 6.8ns
- Мощность: 1.3W
- Сопротивление в открытом состоянии: 0.3Ω
- Ток стока: 1.3A
