Транзистор: МОП р-канальный; полевой; HEXFET; -20В; -4,3А; 1,3Вт Семейство Силовые МОП-транзисторы HEXFET Технические параметры
- Continuous Drain Current (Id): -4.3A
- Drain-Source Voltage (Vds): -20V
- Fall Time: 25ns
- Gate-Source Voltage: 12V
- Height Units: 3
- Manufacturer: INTERNATIONAL RECTIFIER
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 95mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-23
- Packaging: Tape & Reel
- Phases: Single
- Power Dissipation (Pd): 1.3W
- Rise Time: 12ns
- Transistor Polarity: P-Channel
- Turn-OFF Delay Time: 34ns
- Turn-ON Delay Time: 7ns