MOSFET N, 200 V 5.2 A 50 W D2PAK Семейство Силовые МОП-транзисторы, D2PAK, IR Технические параметры
- Continuous Drain Current (Id): 3.3A
- Drain-Source Voltage (Vds): 200V
- Fall Time: 13ns
- Gate-Source Voltage: 4V
- Height Units: 3
- Manufacturer: Vishay
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 800mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: D2PAK
- Packaging: Tape & Reel
- Phases: Single
- Power Dissipation (Pd): 50W
- Rise Time: 22ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 19ns
- Turn-ON Delay Time: 7.2ns